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E-Learning – ISO 12406:2010

Deskripsi

ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 10 16 atoms/cm 3 and 2,5 x 10 21 atoms/cm 3 and to crater depths of 50 nm or deeper.

Materi

1. Introduction ISO 12406

• Scope
• Normative reference
• Term and Definitions
• Symbols and Abbreviated Terms

2. Principle ISO 12406

3. Reference Materials

4. Apparatus

5. Specimen

6. Procedures

• Adjustment of secondary-ion mass spectrometer
• Optimizing the secondary-ion mass spectrometer settings
• Specimen introduction
• Detected ions
• Measurement of test specimen
• Calibration

7. Diskusi